Stocking distributor of Electronic Components
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| Manufacturer Part Number: | EFC6601R-A-TR |
|---|---|
| Manufacturer: | ON Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET 2N-CH EFCP |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | EFC6601R-A-TR Datasheet |
| Internal Part Number | 898-EFC6601R-A-TR | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 5,000 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 48nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 2W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFBGA | |
| Supplier Device Package | 6-EFCP (2.7x1.81) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | EFC6601R-A-TR | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
EFC6601R-A-TR is in stock for immediate shipping now. We are the distributor of ON Semiconductor all series components. The condition of EFC6601R-A-TR is new and unused, you can buy EFC6601R-A-TR ON Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for EFC6601R-A-TR.
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