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IPD26N06S2L35ATMA1

IPD26N06S2L35ATMA1
Manufacturer Part Number:IPD26N06S2L35ATMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 55V 30A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPD26N06S2L35ATMA1 Datasheet
IPD26N06S2L35ATMA1´s Parameters
Internal Part Number898-IPD26N06S2L35ATMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab/Test Site Addition 16/Oct/2014
Wafer Fab/Test Site Addition 15/Dec/2014
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusNot Available
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs35 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2V @ 26µA
Gate Charge (Qg) @ Vgs24nC @ 10V
Input Capacitance (Ciss) @ Vds621pF @ 25V
Power - Max68W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPD26N06S2L35ATMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

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