Manufacturer Part Number: | IRF640STRRPBF |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 200V 18A D2PAK |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IRF640STRRPBF Datasheet |
Internal Part Number | 898-IRF640STRRPBF | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Video File | MOSFET Technologies for Power Conversion | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | - | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 70nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1300pF @ 25V | |
Power - Max | 130W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Supplier Device Package | TO-263 (D2Pak) | |
Standard Package | 800 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IRF640STRRPBF | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IRF640STRRPBF is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of IRF640STRRPBF is new and unused, you can buy IRF640STRRPBF Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRF640STRRPBF.
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