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| Manufacturer Part Number: | IRLM220ATF |
|---|---|
| Manufacturer: | Fairchild Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 200V 1.13A SOT-223 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | IRLM220ATF Datasheet |
| Internal Part Number | 898-IRLM220ATF | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Fairchild Semiconductor | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 1.13A (Ta) | |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 570mA, 5V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 430pF @ 25V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Supplier Device Package | SOT-223-4 | |
| Standard Package | 4,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IRLM220ATF | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IRLM220ATF is in stock for immediate shipping now. We are the distributor of Fairchild Semiconductor all series components. The condition of IRLM220ATF is new and unused, you can buy IRLM220ATF Fairchild Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRLM220ATF.
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