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| Manufacturer Part Number: | IRLML5203 |
|---|---|
| Manufacturer: | Infineon Technologies |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET P-CH 30V 3A SOT-23 |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | Obsolete / Discontinued |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | IRLML5203 Datasheet |
| Internal Part Number | 898-IRLML5203 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V | |
| Power - Max | 1.25W | |
| Operating Temperature | * | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Standard Package | 95 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IRLML5203 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IRLML5203 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IRLML5203 is new and unused, you can buy IRLML5203 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRLML5203.
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