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| Manufacturer Part Number: | IXFB210N30P3 |
|---|---|
| Manufacturer: | IXYS |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9030 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 300V 210A PLUS264 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | IXFB210N30P3 Datasheet |
| Internal Part Number | 898-IXFB210N30P3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | N-Channel Standard FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | HiPerFET™, Polar3™ | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 300V | |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) | |
| Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 105A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 8mA | |
| Gate Charge (Qg) @ Vgs | 268nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 16200pF @ 25V | |
| Power - Max | 1890W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-264-3, TO-264AA | |
| Supplier Device Package | PLUS264™ | |
| Standard Package | 25 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IXFB210N30P3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IXFB210N30P3 is in stock for immediate shipping now. We are the distributor of IXYS all series components. The condition of IXFB210N30P3 is new and unused, you can buy IXFB210N30P3 IXYS with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IXFB210N30P3.
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