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| Manufacturer Part Number: | R6010ANX |
|---|---|
| Manufacturer: | Rohm Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9555 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 600V 10A TO-220FM |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | R6010ANX Datasheet |
| Internal Part Number | 898-R6010ANX | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Featured Product | MOSFET ECOMOS | |
| Online Catalog | N-Channel Standard FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Packaging | Bulk | |
| Part Status | Not For New Designs | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 50W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220FM | |
| Standard Package | 500 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | R6010ANX | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
R6010ANX is in stock for immediate shipping now. We are the distributor of Rohm Semiconductor all series components. The condition of R6010ANX is new and unused, you can buy R6010ANX Rohm Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for R6010ANX.
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