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| Manufacturer Part Number: | STL25N15F3 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 12010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 150V 6A POWERFLAT |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | STL25N15F3 Datasheet |
| Internal Part Number | 898-STL25N15F3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| Series | STripFET™ III | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Rds On (Max) @ Id, Vgs | 57 mOhm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V | |
| Power - Max | 80W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PowerFlat™ (6x5) | |
| Standard Package | 3,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | STL25N15F3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
STL25N15F3 is in stock for immediate shipping now. We are the distributor of STMicroelectronics all series components. The condition of STL25N15F3 is new and unused, you can buy STL25N15F3 STMicroelectronics with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for STL25N15F3.
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