Stocking distributor of Electronic Components

IPD082N10N3GBTMA1

IPD082N10N3GBTMA1
Manufacturer Part Number:IPD082N10N3GBTMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 100V 80A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):Obsolete / Discontinued
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPD082N10N3GBTMA1 Datasheet
IPD082N10N3GBTMA1´s Parameters
Internal Part Number898-IPD082N10N3GBTMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMult Dev EOL 20/Oct/2015
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds3980pF @ 50V
Power - Max125W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPD082N10N3GBTMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

IPD082N10N3GBTMA1 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPD082N10N3GBTMA1 is new and unused, you can buy IPD082N10N3GBTMA1 Infineon Technologies with us at a very low price and quick delivery.

Please kindly send us an email if you have any demands for IPD082N10N3GBTMA1.

Related Components of IPD082N10N3GBTMA1
DIODE GEN PURP 50V 15A DO203AB VS-1N3208.pdf
Zener Diode 9V 500mW Through Hole DO-35 1N936B.pdf
Zener Diode 7.3V 500mW ±3% Surface Mount LLDS RLZTE-117.5A.pdf
MOSFET N-CH 650V 4A D2PAK STB6N65M2.pdf
MOSFET N-CH 500V 14A TO220 RJK5013DPP-E0#T2.pdf
Digital Potentiometer 50k Ohm 2 Circuit 128 Taps SPI Interface 16-UTQFN (2.6x1.8) ISL23428UFRUZ-TK.pdf
14 Bit Digital to Analog Converter 1 8-SOIC MAX544BESA+.pdf
IC FPGA 133 I/O 208QFP A3P125-PQ208.pdf
IC FPGA 72 I/O 169FBGA EP4CGX30BF14I7.pdf
D-Type Transparent Latch 1 Channel 10:10 IC Tri-State 24-TSSOP 74ACT841MTC.pdf
IC 8BIT SHFT REG TRI-ST 16-SOIC SN74AHC595D.pdf
IC SRAM 64KBIT 25NS 100TQFP CY7C024AV-25AXC.pdf
IC DDR2 SDRAM 512MBIT 5NS 84FBGA MT47H32M16BN-5E IT:D TR.pdf
IC FLASH/LPDRAM 1.5GBIT 153VFBGA MT29C1G12MAACVAML-5 IT.pdf
IC PROM SER CONFIG 1M 3.3V 8-DIP XC1701LPDG8C.pdf